Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors - researchr publication authors

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W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan. Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. Microelectronics Reliability, 49(1):1-7, 2009. [doi]

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