Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors

W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan. Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. Microelectronics Reliability, 49(1):1-7, 2009. [doi]

@article{LauYCHLSC09,
  title = {Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors},
  author = {W. S. Lau and Peizhen Yang and Jason Zhiwei Chian and V. Ho and C. H. Loh and S. Y. Siah and L. Chan},
  year = {2009},
  doi = {10.1016/j.microrel.2008.10.006},
  url = {http://dx.doi.org/10.1016/j.microrel.2008.10.006},
  tags = {C++},
  researchr = {https://researchr.org/publication/LauYCHLSC09},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {49},
  number = {1},
  pages = {1-7},
}