Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors - researchr publication

researchr

You are not signed in
Sign in
Sign up

W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan. Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. Microelectronics Reliability, 49(1):1-7, 2009. [doi]

Abstract is missing.

runs on WebDSL