Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions - researchr publication authors

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Maximilian Lederer, Franz Müller 0001, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel. Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. In IEEE International Memory Workshop, IMW 2024, Seoul, Republic of Korea, May 12-15, 2024. pages 1-4, IEEE, 2024. [doi]

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