Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions

Maximilian Lederer, Franz Müller 0001, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel. Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. In IEEE International Memory Workshop, IMW 2024, Seoul, Republic of Korea, May 12-15, 2024. pages 1-4, IEEE, 2024. [doi]

@inproceedings{LedererMHORYDPOASLKS24,
  title = {Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions},
  author = {Maximilian Lederer and Franz Müller 0001 and Raik Hoffmann and Ricardo Olivo and Yannick Raffel and Shouzhuo Yang and Sourav De and Roman Potjan and Oliver Ostien and Abdelrahman Altawil and Ayse Sünbül and David Lehninger and Thomas Kämpfe and Konrad Seidel},
  year = {2024},
  doi = {10.1109/IMW59701.2024.10536975},
  url = {https://doi.org/10.1109/IMW59701.2024.10536975},
  researchr = {https://researchr.org/publication/LedererMHORYDPOASLKS24},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE International Memory Workshop, IMW 2024, Seoul, Republic of Korea, May 12-15, 2024},
  publisher = {IEEE},
  isbn = {979-8-3503-0652-1},
}