Jooyoung Lee, Mao-Nan Chang, Kang L. Wang. Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO::2:: patterned Si template. Microelectronics Journal, 37(12):1523-1527, 2006. [doi]
@article{LeeCW06,
title = {Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO::2:: patterned Si template},
author = {Jooyoung Lee and Mao-Nan Chang and Kang L. Wang},
year = {2006},
doi = {10.1016/j.mejo.2006.05.014},
url = {http://dx.doi.org/10.1016/j.mejo.2006.05.014},
researchr = {https://researchr.org/publication/LeeCW06},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {37},
number = {12},
pages = {1523-1527},
}