Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO::2:: patterned Si template - researchr publication

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Jooyoung Lee, Mao-Nan Chang, Kang L. Wang. Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO::2:: patterned Si template. Microelectronics Journal, 37(12):1523-1527, 2006. [doi]

Abstract is missing.

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