Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection - researchr publication authors

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Jian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen. Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 2, IEEE, 2022. [doi]

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