Jian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen. Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 2, IEEE, 2022. [doi]
@inproceedings{LeeHHCJLWLLHC22,
title = {Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection},
author = {Jian-Hsing Lee and Yeh-Jen Huang and Li-Yang Hong and Li-Fan Chen and Yeh-Ning Jou and Shin-Cheng Lin and Walter Wohlmuth and Chih-Cherng Liao and Ching-Ho Li and Shoa-Chang Huang and Ke-Horng Chen},
year = {2022},
doi = {10.1109/IRPS48227.2022.9764596},
url = {https://doi.org/10.1109/IRPS48227.2022.9764596},
researchr = {https://researchr.org/publication/LeeHHCJLWLLHC22},
cites = {0},
citedby = {0},
pages = {2},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7950-9},
}