Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo. Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 21-1, IEEE, 2022. [doi]

Authors

Ethan S. Lee

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Jungwoo Joh

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Dong-Seup Lee

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Jesús A. del Alamo

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