Simultaneous Subthreshold and Gate-Oxide Tunneling Leakage Current Analysis in Nanometer CMOS Design - researchr publication authors

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Dongwoo Lee, Wesley Kwong, David Blaauw, Dennis Sylvester. Simultaneous Subthreshold and Gate-Oxide Tunneling Leakage Current Analysis in Nanometer CMOS Design. In 4th International Symposium on Quality of Electronic Design (ISQED 2003), 24-26 March 2003, San Jose, CA, USA. pages 287-292, IEEE Computer Society, 2003. [doi]

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