Dongwoo Lee, Wesley Kwong, David Blaauw, Dennis Sylvester. Simultaneous Subthreshold and Gate-Oxide Tunneling Leakage Current Analysis in Nanometer CMOS Design. In 4th International Symposium on Quality of Electronic Design (ISQED 2003), 24-26 March 2003, San Jose, CA, USA. pages 287-292, IEEE Computer Society, 2003. [doi]
@inproceedings{LeeKBS03,
title = {Simultaneous Subthreshold and Gate-Oxide Tunneling Leakage Current Analysis in Nanometer CMOS Design},
author = {Dongwoo Lee and Wesley Kwong and David Blaauw and Dennis Sylvester},
year = {2003},
url = {http://csdl.computer.org/comp/proceedings/isqed/2003/1881/00/18810287abs.htm},
tags = {analysis, design},
researchr = {https://researchr.org/publication/LeeKBS03},
cites = {0},
citedby = {0},
pages = {287-292},
booktitle = {4th International Symposium on Quality of Electronic Design (ISQED 2003), 24-26 March 2003, San Jose, CA, USA},
publisher = {IEEE Computer Society},
isbn = {0-7695-1881-8},
}