A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology - researchr publication

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Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Sohn, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung. A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology. J. Solid-State Circuits, 47(1):131-140, 2012. [doi]

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