Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, SeungBum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Ho Joon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, SeungHyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki Tae Park, Kyehyun Kyung. A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 340-342, IEEE, 2018. [doi]
@inproceedings{LeeKKJJKLKPLKLL18,
title = {A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput},
author = {Seungjae Lee and Chulbum Kim and Minsu Kim and Sung-Min Joe and Joonsuc Jang and SeungBum Kim and Kangbin Lee and Jisu Kim and Jiyoon Park and Hanjun Lee and Min-Seok Kim and Seonyong Lee and SeonGeon Lee and Jinbae Bang and Dongjin Shin and Hwajun Jang and Deokwoo Lee and Nahyun Kim and Jonghoo Jo and Jonghoon Park and Sohyun Park and Youngsik Rho and Yongha Park and Ho Joon Kim and Cheon An Lee and Chungho Yu and Young-Sun Min and Moosung Kim and Kyungmin Kim and SeungHyun Moon and Hyun-Jin Kim and Youngdon Choi and YoungHwan Ryu and Jinwon Choi and Minyeong Lee and Jungkwan Kim and Gyo Soo Choo and Jeong-Don Lim and Dae-Seok Byeon and Ki-Whan Song and Ki Tae Park and Kyehyun Kyung},
year = {2018},
doi = {10.1109/ISSCC.2018.8310323},
url = {https://doi.org/10.1109/ISSCC.2018.8310323},
researchr = {https://researchr.org/publication/LeeKKJJKLKPLKLL18},
cites = {0},
citedby = {0},
pages = {340-342},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}