The following publications are possibly variants of this publication:
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- 11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memoryChulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, SeungBum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-yub Lee, Ki Tae Park, Kyehyun Kyung. isscc 2017: 202-203 [doi]
- 13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO RateDoo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, JongEun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, DongHyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seuna Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung Hwan Choi, Sangjoon Hwang, Jaeheon Jeong. isscc 2020: 218-220 [doi]
- A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash MemoryChulbum Kim, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, SeungBum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-yub Lee, Ki Tae Park, Kyehyun Kyung. jssc, 53(1):124-133, 2018. [doi]
- A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOSCuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, M. Murin, M. Shlick, M. Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader. isscc 2009: 246-247 [doi]
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- th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass ProductionSoochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyungmoon Kim, Sejie Takaki, Yujeong Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, Kyungyoon Noh, Su-Jin Ahn, Sunghoi Hur. imw2 2023: 1-4 [doi]
- 13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO RateWontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Nam Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sangwan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeong-Woo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-yub Lee, Sunghoi Hur. isscc 2024: 236-237 [doi]
- A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughputSeung-Ho Chang, Sok-Kyu Lee, Seong Je Park, Min-Joong Jung, Jung-Chul Han, In-Soo Wang, Kyu-Hee Lim, Jung Hwan Lee, Ji-Hwan Kim, Won-Kyung Kang, Tai-Kyu Kang, Hee-Su Byun, Yujong Noh, Lee-Hyun Kwon, Bon-Kwang Koo, Myung Cho, Joong-Seob Yang, Yo-Hwan Koh. isscc 2009: 240-241 [doi]
- Multilevel Dual-Channel NAND Flash Memories with High Read and Program Verifying Speeds Utilizing Asymmetrically-Doped Channel RegionsJoung Woo Lee, Joo Hyung You, Sang Hyun Jang, Kae-Dal Kwack, Tae-Whan Kim. ieicet, 93-C(5):654-657, 2010. [doi]