11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, SeungBum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-yub Lee, Ki Tae Park, Kyehyun Kyung. 11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. In 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, CA, USA, February 5-9, 2017. pages 202-203, IEEE, 2017. [doi]

Abstract

Abstract is missing.