Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, SeungBum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-yub Lee, Ki Tae Park, Kyehyun Kyung. 11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. In 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, CA, USA, February 5-9, 2017. pages 202-203, IEEE, 2017. [doi]
@inproceedings{KimCJPPKKLLKPAL17,
title = {11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory},
author = {Chulbum Kim and Ji-Ho Cho and Woopyo Jeong and Il Han Park and Hyun Wook Park and Doo-Hyun Kim and Daewoon Kang and Sunghoon Lee and Ji-Sang Lee and Wontae Kim and Jiyoon Park and Yang-Lo Ahn and Jiyoung Lee and Jong-Hoon Lee and SeungBum Kim and Hyun-Jun Yoon and Jaedoeg Yu and Nayoung Choi and Yelim Kwon and Nahyun Kim and Hwajun Jang and Jonghoon Park and Seunghwan Song and Yongha Park and Jinbae Bang and Sangki Hong and Byunghoon Jeong and Hyun-Jin Kim and Chunan Lee and Young-Sun Min and Inryul Lee and In-Mo Kim and Sung Hoon Kim and Dongkyu Yoon and Ki-Sung Kim and Youngdon Choi and Moosung Kim and Hyunggon Kim and Pansuk Kwak and Jeong-Don Ihm and Dae-Seok Byeon and Jin-yub Lee and Ki Tae Park and Kyehyun Kyung},
year = {2017},
doi = {10.1109/ISSCC.2017.7870331},
url = {http://dx.doi.org/10.1109/ISSCC.2017.7870331},
researchr = {https://researchr.org/publication/KimCJPPKKLLKPAL17},
cites = {0},
citedby = {0},
pages = {202-203},
booktitle = {2017 IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, CA, USA, February 5-9, 2017},
publisher = {IEEE},
isbn = {978-1-5090-3758-2},
}