A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, M. Murin, M. Shlick, M. Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader. A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 246-247, IEEE, 2009. [doi]

Abstract

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