Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, M. Murin, M. Shlick, M. Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader. A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 246-247, IEEE, 2009. [doi]
@inproceedings{TrinhSN09,
title = {A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS},
author = {Cuong Trinh and Noboru Shibata and Takeshi Nakano and Mikio Ogawa and Jumpei Sato and Yoshikazu Takeyama and Katsuaki Isobe and Binh Le and Farookh Moogat and Nima Mokhlesi and Kenji Kozakai and Patrick Hong and Teruhiko Kamei and Kiyoaki Iwasa and J. Nakai and Takahiro Shimizu and Mitsuaki Honma and Shintaro Sakai and Toshimasa Kawaai and Satoru Hoshi and Jonghak Yuh and Cynthia Hsu and Taiyuan Tseng and Jason Li and Jayson Hu and M. Liu and Shahzad Khalid and J. Chen and Mitsuyuki Watanabe and Hung-Szu Lin and Junhui Yang and K. McKay and Khanh Nguyen and Tuan Pham and Y. Matsuda and K. Nakamura and K. Kanebako and S. Yoshikawa and W. Igarashi and A. Inoue and T. Takahashi and Y. Komatsu and C. Suzuki and K. Kanazawa and Masaaki Higashitani and Seungpil Lee and T. Murai and K. Nguyen and James Lan and Sharon Huynh and M. Murin and M. Shlick and M. Lasser and Raul Cernea and Mehrdad Mofidi and K. Schuegraf and Khandker Quader},
year = {2009},
doi = {10.1109/ISSCC.2009.4977400},
url = {http://dx.doi.org/10.1109/ISSCC.2009.4977400},
researchr = {https://researchr.org/publication/TrinhSN09},
cites = {0},
citedby = {0},
pages = {246-247},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009},
publisher = {IEEE},
isbn = {978-1-4244-3458-9},
}