S. Lee, N. H. Lee, K. W. Lee, J. H. Kim, J. H. Jin, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae. Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-4, IEEE, 2023. [doi]
@inproceedings{LeeLLKJLHKP23,
title = {Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC},
author = {S. Lee and N. H. Lee and K. W. Lee and J. H. Kim and J. H. Jin and Y. S. Lee and Y. C. Hwang and H. S. Kim and S. Pae},
year = {2023},
doi = {10.1109/IRPS48203.2023.10117889},
url = {https://doi.org/10.1109/IRPS48203.2023.10117889},
researchr = {https://researchr.org/publication/LeeLLKJLHKP23},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023},
publisher = {IEEE},
isbn = {978-1-6654-5672-2},
}