Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC

S. Lee, N. H. Lee, K. W. Lee, J. H. Kim, J. H. Jin, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae. Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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