A 7.8Gb/s/pin 1.96pJ/b compact single-ended TRX and CDR with phase-difference modulation for highly reflective memory interfaces

Sooeun Lee, Jaeyoung Seo, Kyunghyun Lim, Jaehyun Ko, Jae-Yoon Sim, Hong June Park, Byungsub Kim. A 7.8Gb/s/pin 1.96pJ/b compact single-ended TRX and CDR with phase-difference modulation for highly reflective memory interfaces. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 272-274, IEEE, 2018. [doi]

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