Sooeun Lee, Jaeyoung Seo, Kyunghyun Lim, Jaehyun Ko, Jae-Yoon Sim, Hong June Park, Byungsub Kim. A 7.8Gb/s/pin 1.96pJ/b compact single-ended TRX and CDR with phase-difference modulation for highly reflective memory interfaces. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 272-274, IEEE, 2018. [doi]
@inproceedings{LeeSLKSPK18,
title = {A 7.8Gb/s/pin 1.96pJ/b compact single-ended TRX and CDR with phase-difference modulation for highly reflective memory interfaces},
author = {Sooeun Lee and Jaeyoung Seo and Kyunghyun Lim and Jaehyun Ko and Jae-Yoon Sim and Hong June Park and Byungsub Kim},
year = {2018},
doi = {10.1109/ISSCC.2018.8310289},
url = {https://doi.org/10.1109/ISSCC.2018.8310289},
researchr = {https://researchr.org/publication/LeeSLKSPK18},
cites = {0},
citedby = {0},
pages = {272-274},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}