Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier - researchr publication authors

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Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong Moon Choi, Soon-Chan Kwon, Ho Joon Kim, Hyun-Suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-Won Kwon, Hyunsang Hwang. Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier. In 2016 IEEE Symposium on VLSI Circuits, VLSIC 2016, Honolulu, HI, USA, June 15-17, 2016. pages 1-2, IEEE, 2016. [doi]

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