Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong Moon Choi, Soon-Chan Kwon, Ho Joon Kim, Hyun-Suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-Won Kwon, Hyunsang Hwang. Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier. In 2016 IEEE Symposium on VLSI Circuits, VLSIC 2016, Honolulu, HI, USA, June 15-17, 2016. pages 1-2, IEEE, 2016. [doi]
@inproceedings{LeeSSWCKKKKJKH16,
title = {Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier},
author = {Sangheon Lee and Jeonghwan Song and Changhyuk Seong and Jiyong Woo and Jong Moon Choi and Soon-Chan Kwon and Ho Joon Kim and Hyun-Suk Kang and Soo Gil Kim and Hoe Gwon Jung and Kee-Won Kwon and Hyunsang Hwang},
year = {2016},
doi = {10.1109/VLSIC.2016.7573503},
url = {http://dx.doi.org/10.1109/VLSIC.2016.7573503},
researchr = {https://researchr.org/publication/LeeSSWCKKKKJKH16},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2016 IEEE Symposium on VLSI Circuits, VLSIC 2016, Honolulu, HI, USA, June 15-17, 2016},
publisher = {IEEE},
isbn = {978-1-5090-0635-9},
}