A 78.8fJ/b/mm 12.0Gb/s/Wire Capacitively Driven On-Chip Link Over 5.6mm with an FFE-Combined Ground-Forcing Biasing Technique for DRAM Global Bus Line in 65nm CMOS - researchr publication

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Sangyoon Lee, Jaekwang Yun, Suhwan Kim. A 78.8fJ/b/mm 12.0Gb/s/Wire Capacitively Driven On-Chip Link Over 5.6mm with an FFE-Combined Ground-Forcing Biasing Technique for DRAM Global Bus Line in 65nm CMOS. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 454-456, IEEE, 2022. [doi]

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