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Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation

Z. F. Lei, H. X. Guo, M. H. Tang, C. Zeng, Z. G. Zhang, H. Chen, Y. F. En, Y. Huang, Y. Q. Chen, C. Peng. Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation. Microelectronics Reliability, 80:312-316, 2018. [doi]

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Z. F. Lei

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H. X. Guo

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M. H. Tang

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C. Zeng

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Z. G. Zhang

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H. Chen

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Y. F. En

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Y. Huang

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Y. Q. Chen

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C. Peng

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