Z. F. Lei, H. X. Guo, M. H. Tang, C. Zeng, Z. G. Zhang, H. Chen, Y. F. En, Y. Huang, Y. Q. Chen, C. Peng. Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation. Microelectronics Reliability, 80:312-316, 2018. [doi]
@article{LeiGTZZCEHCP18,
title = {Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation},
author = {Z. F. Lei and H. X. Guo and M. H. Tang and C. Zeng and Z. G. Zhang and H. Chen and Y. F. En and Y. Huang and Y. Q. Chen and C. Peng},
year = {2018},
doi = {10.1016/j.microrel.2017.07.086},
url = {https://doi.org/10.1016/j.microrel.2017.07.086},
researchr = {https://researchr.org/publication/LeiGTZZCEHCP18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {80},
pages = {312-316},
}