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Z. F. Lei, H. X. Guo, M. H. Tang, C. Zeng, Z. G. Zhang, H. Chen, Y. F. En, Y. Huang, Y. Q. Chen, C. Peng. Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation. Microelectronics Reliability, 80:312-316, 2018. [doi]