A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism - researchr publication

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Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu, Writam Banerjee. A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. Microelectronics Journal, 86:1-6, 2019. [doi]

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