Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer - researchr publication authors

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Yan Lin Li, Kuei-Shu Chang-Liao, Yu-wei Chang, Tse-Jung Huang, Chen-Chien Li, Zhao-Chen Gu, Po-Yen Chen, Tzung-Yu Wu, Jiayi Huang, Fu-Chuan Chu, Shih-Han Yi. Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. Microelectronics Reliability, 79:136-139, 2017. [doi]

This author has not been identified. Look up 'Yan Lin Li' in GoogleThis author has not been identified. Look up 'Kuei-Shu Chang-Liao' in GoogleThis author has not been identified. Look up 'Yu-wei Chang' in GoogleThis author has not been identified. Look up 'Tse-Jung Huang' in GoogleThis author has not been identified. Look up 'Chen-Chien Li' in GoogleThis author has not been identified. Look up 'Zhao-Chen Gu' in GoogleThis author has not been identified. Look up 'Po-Yen Chen' in GoogleThis author has not been identified. Look up 'Tzung-Yu Wu' in GoogleThis author has not been identified. Look up 'Jiayi Huang' in GoogleThis author has not been identified. Look up 'Fu-Chuan Chu' in GoogleThis author has not been identified. Look up 'Shih-Han Yi' in Google

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