Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer

Yan Lin Li, Kuei-Shu Chang-Liao, Yu-wei Chang, Tse-Jung Huang, Chen-Chien Li, Zhao-Chen Gu, Po-Yen Chen, Tzung-Yu Wu, Jiayi Huang, Fu-Chuan Chu, Shih-Han Yi. Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. Microelectronics Reliability, 79:136-139, 2017. [doi]

Abstract

Abstract is missing.