Yan Lin Li, Kuei-Shu Chang-Liao, Yu-wei Chang, Tse-Jung Huang, Chen-Chien Li, Zhao-Chen Gu, Po-Yen Chen, Tzung-Yu Wu, Jiayi Huang, Fu-Chuan Chu, Shih-Han Yi. Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. Microelectronics Reliability, 79:136-139, 2017. [doi]
@article{LiCCHLGCWHCY17,
title = {Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer},
author = {Yan Lin Li and Kuei-Shu Chang-Liao and Yu-wei Chang and Tse-Jung Huang and Chen-Chien Li and Zhao-Chen Gu and Po-Yen Chen and Tzung-Yu Wu and Jiayi Huang and Fu-Chuan Chu and Shih-Han Yi},
year = {2017},
doi = {10.1016/j.microrel.2017.10.018},
url = {https://doi.org/10.1016/j.microrel.2017.10.018},
researchr = {https://researchr.org/publication/LiCCHLGCWHCY17},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {79},
pages = {136-139},
}