A 0.3-6 ​GHz noise and distortion cancelling LNA achieving an NF of 2.8±0.3 ​dB in 0.18-μm SiGe BiCMOS process

Zhenrong Li, Yiming Duan, Zhen Li, Zeyuan Wang, Yiqi Zhuang. A 0.3-6 ​GHz noise and distortion cancelling LNA achieving an NF of 2.8±0.3 ​dB in 0.18-μm SiGe BiCMOS process. Microelectronics Journal, 105:104904, 2020. [doi]

Abstract

Abstract is missing.