3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET - researchr publication authors

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Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu. 3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. In EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021. pages 1520-1525, ACM, 2021. [doi]

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