3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET

Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu. 3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. In EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021. pages 1520-1525, ACM, 2021. [doi]

Abstract

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