Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu. 3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. In EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021. pages 1520-1525, ACM, 2021. [doi]
@inproceedings{LiHJZW21,
title = {3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET},
author = {Ting Li and Dongqing Hu and Yunpeng Jia and Xintian Zhou and Yu Wu},
year = {2021},
doi = {10.1145/3501409.3501677},
url = {https://doi.org/10.1145/3501409.3501677},
researchr = {https://researchr.org/publication/LiHJZW21},
cites = {0},
citedby = {0},
pages = {1520-1525},
booktitle = {EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22 - 24, 2021},
publisher = {ACM},
isbn = {978-1-4503-8432-2},
}