Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang. Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. Microelectronics Journal, 42(10):1164-1168, 2011. [doi]
@article{LiHLT11,
title = {Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs},
author = {Peicheng Li and Guangxi Hu and Ran Liu and Tingao Tang},
year = {2011},
doi = {10.1016/j.mejo.2011.06.002},
url = {http://dx.doi.org/10.1016/j.mejo.2011.06.002},
tags = {source-to-source, peer-to-peer, open-source},
researchr = {https://researchr.org/publication/LiHLT11},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {42},
number = {10},
pages = {1164-1168},
}