The following publications are possibly variants of this publication:
- Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensionsCong Li, Yiqi Zhuang, Ru Han, Gang Jin, Junlin Bao. mr, 51(12):2053-2058, 2011. [doi]
- Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core-shell channel surrounding-gate junctionless MOSFETLijun Xu, Guitai Wu, Pei Li, Tiedong Cheng. mj, 139:105830, September 2023. [doi]
- Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFETPing Xiang, Zhihao Ding, Guangxi Hu, Hui Chol Ri, Ran Liu 0001, Lingli Wang, Xing Zhou. asicon 2013: 1-4 [doi]