Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process - researchr publication authors

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Ning Li, Takeshi Inoue, Takuichi Hirano, Jian Pang, Rui Wu, Kenichi Okada, Hitoshi Sakane, Akira Matsuzawa. Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 254-257, IEEE, 2015. [doi]

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