1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes - researchr publication authors

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Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing. 1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

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