Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing. 1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
@inproceedings{LiNHTSKJX18,
title = {1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes},
author = {Wenshen Li and Kazuki Nomoto and Zongyang Hu and Nicholas Tanen and Kohei Sasaki and Akito Kuramata and Debdeep Jena and Huili Grace Xing},
year = {2018},
doi = {10.1109/DRC.2018.8442245},
url = {https://doi.org/10.1109/DRC.2018.8442245},
researchr = {https://researchr.org/publication/LiNHTSKJX18},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
publisher = {IEEE},
isbn = {978-1-5386-3028-0},
}