A 40nm RRAM Compute-in-Memory Macro Featuring On-Chip Write-Verify and Offset-Cancelling ADC References

Wantong Li, Xiaoyu Sun, Hongwu Jiang, Shanshi Huang, Shimeng Yu. A 40nm RRAM Compute-in-Memory Macro Featuring On-Chip Write-Verify and Offset-Cancelling ADC References. In 47th ESSCIRC 2021 - European Solid State Circuits Conference, ESSCIR 2021, Grenoble, France, September 13-22, 2021. pages 79-82, IEEE, 2021. [doi]

@inproceedings{LiSJHY21,
  title = {A 40nm RRAM Compute-in-Memory Macro Featuring On-Chip Write-Verify and Offset-Cancelling ADC References},
  author = {Wantong Li and Xiaoyu Sun and Hongwu Jiang and Shanshi Huang and Shimeng Yu},
  year = {2021},
  doi = {10.1109/ESSCIRC53450.2021.9567844},
  url = {https://doi.org/10.1109/ESSCIRC53450.2021.9567844},
  researchr = {https://researchr.org/publication/LiSJHY21},
  cites = {0},
  citedby = {0},
  pages = {79-82},
  booktitle = {47th ESSCIRC 2021 - European Solid State Circuits Conference, ESSCIR 2021, Grenoble, France, September 13-22, 2021},
  publisher = {IEEE},
  isbn = {978-1-6654-3751-6},
}