AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

Xiangdong Li, Weihang Zhang, Mengdi Fu, JinCheng Zhang, Haiqing Jiang, Zhenxing Guo, Yu Zou, Renyuan Jiang, Zuo-Chen Shi, Yue Hao. AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. IEICE Electronic Express, 12(20):20150694, 2015. [doi]

Abstract

Abstract is missing.