The following publications are possibly variants of this publication:
- 100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOSJames Chingwei Li, Kenneth R. Elliott, David S. Matthews, Donald A. Hitko, Daniel Zehnder, Yakov Royter, Pamela R. Patterson, Tahir Hussain, Joseph F. Jensen. jssc, 44(10):2663-2670, 2009. [doi]
- 140 GHz power amplifier based on 0.5 µm composite collector InP DHBTOupeng Li, Yong Zhang, Tiedi Zhang, Lei Wang, Ruimin Xu, Yan Sun, Wei Cheng, Yuan Wang, Bin Niu. ieiceee, 14(8):20170191, 2017. [doi]