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Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

Kun Liang, Haochen Zhang, Haiding Sun. Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes. In Device Research Conference, DRC 2024, College Park, MD, USA, June 24-26, 2024. pages 1-2, IEEE, 2024. [doi]

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