11 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM - researchr publication authors

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C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C. Y. Lin, Z. X. Li, F.-C. Hsieh, C.-C. Wang, F. S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T.-C. Chen, M. H. Lee. 11 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 1-2, IEEE, 2022. [doi]

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