C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C. Y. Lin, Z. X. Li, F.-C. Hsieh, C.-C. Wang, F. S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T.-C. Chen, M. H. Lee. 11 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 1-2, IEEE, 2022. [doi]
@inproceedings{LiaoHLTLLHWCRTC22,
title = {11 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM},
author = {C.-Y. Liao and K.-Y. Hsiang and Z.-F. Lou and H.-C. Tseng and C. Y. Lin and Z. X. Li and F.-C. Hsieh and C.-C. Wang and F. S. Chang and W.-C. Ray and Y.-Y. Tseng and Shu-Tong Chang and T.-C. Chen and M. H. Lee},
year = {2022},
doi = {10.1109/VLSITechnologyandCir46769.2022.9830345},
url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345},
researchr = {https://researchr.org/publication/LiaoHLTLLHWCRTC22},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9772-5},
}