Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin-ichiro Abe, Keita Nakano, Hayato Takeshita, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake. Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-5, IEEE, 2019. [doi]
Abstract is missing.