The following publications are possibly variants of this publication:
- Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS processChun-Yu Lin, Li-Wei Chu, Ming-Dou Ker. mr, 51(8):1315-1324, 2011. [doi]
- ESD protection design for CMOS RF integrated circuits using polysilicon diodesMing-Dou Ker, Chyh-Yih Chang. mr, 42(6):863-872, 2002. [doi]
- Impedance-Isolation Technique for ESD Protection Design in RF Integrated CircuitsMing-Dou Ker, Yuan-Wen Hsiao. ieicet, 92-C(3):341-351, 2009. [doi]
- ESD protection design for wideband RF applications in 65-nm CMOS processLi-Wei Chu, Chun-Yu Lin, Ming-Dou Ker, Ming-Hsiang Song, Jeng-Chou Tseng, Chewnpu Jou, Ming-Hsien Tsai. iscas 2014: 1480-1483 [doi]
- ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCRMing-Dou Ker, Chun-Yu Lin, Guo-Xuan Meng. iscas 2008: 1292-1295 [doi]
- On-Chip Charged Device Model ESD Protection Design Method Using Very Fast Transmission Line Pulse System for RF ICsJae Young Park, Jong-Kyu Song, Dae-Woo Kim, Chang-Soo Jang, Won-Young Jung, Taek-Soo Kim. ieicet, 93-C(5):625-630, 2010. [doi]
- Compact and low-loss ESD protection design for V-band RF applications in a 65-nm CMOS technologyLi-Wei Chu, Chun-Yu Lin, Shiang-Yu Tsai, Ming-Dou Ker, Ming-Hsiang Song, Chewnpu Jou, Tse-Hua Lu, Jeng-Chou Tseng, Ming-Hsien Tsai, Tsun-Lai Hsu, Ping-Fang Hung, Tzu-Heng Chang. iscas 2012: 2127-2130 [doi]
- Design of ESD protection for RF CMOS power amplifier with inductor in matching networkShiang-Yu Tsai, Chun-Yu Lin, Li-Wei Chu, Ming-Dou Ker. apccas 2012: 467-470 [doi]